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We report on spin Hall magnetoresistance (SMR) in bilayers composed of Pt andmagnetic insulator MgFe$_{2}$O$_{4}$ (MFO) with spinel structure. The Ptthickness dependence of the SMR reveals that annealing of the MFO surfacebefore depositing the Pt layer is crucial for a large SMR with better interfacequality. We also found that oxygen pressure during the MFO growth hardlyaffects the SMR while it influences on magnetic property of the MFO film. Ourfindings provide important clues to further understanding the spin transport atinterfaces containing magnetic insulators, facilitating development of lowpower consumption devices.

Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe$_{2}$O$_{4}$ bilayers