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This paper describes the use of flash lamp annealing (FLA) to fabricate high-Sn content GeSn n-MOSFETs. We exploit FLA processing for both impurity activation and for the solid-phase growth (SPG) of the GeSn channel. High-Sn incorporation of up to 12% is achieved by overcoming the solid-solubility limit of Sn in Ge (1%), and high-quality n + -source/drain junctions were obtained by P implantation and subsequent FLA. Consequently, we achieved well-behaved transistor operation of the SPG-Ge 0.88 Sn 0.12  n-MOSFETs, with an on/off current ratio one order of magnitude higher than for conventional rapid thermal annealing processing.

Flash lamp annealing processing to improve the performance of high-Sn content GeSn n-MOSFETs