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We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown\b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3epitaxial films are characterized using capacitance-voltage profiling andsecondary-ion mass spectroscopy. Electron sheet charge density in the range of2.9e12 cm-2 to 8e12 cm-2 with a half width at half maximum ranging from 6.2 nmto 3.5 nm is measured. We also demonstrate a high density (6.4e12 cm-2)degenerate two-dimensional electron gas using a delta-doped\b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure.The total charge couldalso include a contribution from a parallel channel in the\b{eta}-(Al0.26Ga0.74)2O3 alloy barrier.

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy