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We have characterized charged states of a self-aligned Si quantum dot (QD) structure with an areal density as high as ∼10 13  cm −2  by surface potential measurements by using atomic force microscopy (AFM)/Kelvin probe force microscopy (KFM). By line scanning with the electrically-biased AFM tip with respect to the substrate in a contact mode, the corresponding area was negatively charged caused by electron injection from the tip into QDs. Cross-sectional profiles of the surface potential were clearly changed, which depends on the tip bias voltages. Also, a stepwise shape in a relationship between the change of the surface potential (Δ V ) and the tip bias voltages was observed, reflecting electron charging into the discrete energy levels due to the quantum confinement effect. By assuming a simple equivalent circuit model for KFM measurements of the self-aligned Si-QDs, calculated results for Δ V  are in good agreement with the measured results. The agreements precisely clarified the charged states in Si-QDs.

Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique