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The stability and formation mechanism of the defects relevant to silicon andcarbon vacancies at the 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wetoxidation are investigated by first-principles calculation based on the densityfunctional theory. The difference in the total energy of the defects agreeswith the experimental results concerning the dencity of defects. We found thatthe characteristic behaviors of the generation of defects are explained by thepositions of vacancies and antisites in the SiC(000$\bar{1}$) substrate andthat the formation of silicon and carbon vacancies is relevant to thegeneration mechanism of defects. The generation of silicon and carbon vacanciesis attributed to the termination of dangling bonds by H atoms introduced by wetoxidation, resulting in generation of carbon-antisite--carbon-vacancy anddivacancies defects in wet oxidation.

Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation