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A high Seebeck coefficient of 1.17 × 10 3  μ V K −1  was achieved using an on-chip thermoelectric device for a WS 2  atomic-layer film, which was synthesized by ultra-high vacuum RF magnetron sputtering as a function of sputtering power. A layered structure in parallel to the SiO 2 /Si substrate was confirmed from the transmission electron microscopy and X-ray diffraction spectra. The grain size and peak intensities of the Raman spectra increase with a decrease in the sputtering power. Accordingly, the resistivity and activation energy also increase. The WS 2  film can be used in thermoelectric generators, such as energy harvesters in LSIs and wearable devices.

High Seebeck coefficient in PVD-WS2 film with grain size enlargement

High Seebeck coefficient in PVD-WS₂ film with grain size enlargement