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Nb2O5 thin films were deposited on silicon substrate using DC magnetron sputtering by applying variable deposition power on a Nb target and fixing the oxygen flow rate during the deposition process. This technique helped the control of thin film thickness and oxygen-to-metal ratio. Successive deposition powers between 200 W up to 300 W were applied. The minimum thin film thickness was about 25 nm, and the corresponding energy band gap was 3.59 eV. The thin films showed high transmittance and refractive index in the visible region. These characteristics match the high-k materials requirements as replacement of SiO2 layer in energy storage devices and DRAM applications.

Tuning the Oxygen Content in the Nb2O5 Thin Films Deposited on Si by DC Magnetron Sputtering for Energy Storage Devices Applications