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Numerous studies have addressed the use of perovskite materials for fabricating a wide range of optoelectronic devices. This study employs the deposition of an electron transport layer of C 60 and an Ag electrode on CH 3 NH 3 PbBr 3 perovskite crystals to complete a photodetector structure, which exhibits a metal-semiconductor-metal (MSM) type structure. First, CH 3 NH 3 PbBr 3 perovskite crystals were grown by inverse temperature crystallization (ITC) in a pre-heated circulator oven. This oven was able to supply uniform heat for facilitating the growth of high-quality and large-area crystals. Second, the different growth temperatures for CH 3 NH 3 PbBr 3 perovskite crystals were investigated. The electrical, optical, and morphological characteristics of the perovskite crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy, and photoluminescence (PL). Finally, the CH 3 NH 3 PbBr 3 perovskite crystals were observed to form a contact with the Ag/C 60 as the photodetector, which revealed a responsivity of 24.5 A/W.

Study of Metal–Semiconductor–Metal CH3NH3PbBr3 Perovskite Photodetectors Prepared by Inverse Temperature Crystallization Method