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Photoelectric devices can be so widely used in various detection industries that people began to focus on its research. The research of photoelectric sensors with high performance has become an industry goal. In this paper, we prepared photodetectors using organic–inorganic hybrid semiconductor materials with narrow bandgap hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) and investigated the detector photoresponse and time-response characteristics under a single light source. The device exhibits high photoresponsivity and fast response time. The photoresponsivity can reach 1.45 × 10−3 A/W and 8.5 × 10−4 A/W under laser irradiation at 375 nm and 532 nm wavelengths, and the rise and decay times are 63 ms and 62 ms, 62 ms and 64 ms, respectively. The device has excellent performance and this work can extend the application of organic–inorganic hybrid semiconductor materials in photovoltaic and photodetectors.

Investigation of the Photoresponse and Time-Response Characteristics of HDA-BiI5-Based Photodetectors