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The dielectric thin-lm coating on high-power optical components is often the weakest region and will fail at elevated optical uences. A comparison of single-layer coatings of ZrO2, LiF, Ta2O5, SiN, and SiO2 along with anti-reection (AR) coatings optimized at 1064 nm comprised of ZrO2 and Ta2O5 was made, and the results of photothermal common-path interferometry (PCI) and a laser-induced damage threshold (LIDT) are presented here. The coatings were grown by radio frequency (RF) sputtering, pulsed direct-current (DC) sputtering, ion-assisted electron beam evaporation (IAD), and thermal evaporation. Test regimes for LIDT used pulse durations of 9.6 ns at 100 Hz for 1000-on-1 and 1-on-1 regimes at 1064 nm for single-layer and AR coatings, and 20 ns at 20 Hz for a 200-on-1 regime to compare the //ZrO2/SiO2 AR coating

Comparison of Single-Layer and Double-Layer Anti-Reﬂection Coatings Using Laser-Induced Damage Threshold and Photothermal Common-Path Interferometry