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Ion layer gas reaction  ILGAR  method allows for deposition of Cl containing  and Cl free In2S3 layers from InCl3 and In OCCH3CHOCCH3 3 precursor salts, respectively. A comparative study was performed to investigate the role of Cl on the diffusion of Cu from CuSCN source layer into ILGAR deposited In2S3 layers. The Cl concentration was varied between 7 and 14 at.  by varying deposition parameters. The activation energies and exponential pre factors for Cu diffusion in Cl containing samples were between 0.70 to 0.78 eV and between 6.0   10 amp; 8722;6 and 3.2   10 amp; 8722;5 cm2 s. The activation energy in Cl free  ILGAR In2S3 layers was about three times less compared to the Cl containing In2S3, and the pre exponential constant six orders of magnitude lower. These values were comparable to those obtained from thermally evaporated In2S3 layers. The residual Cl occupies S sites in the In2S3 structure leading to non stoichiometry and hence different diffusion mechanism for Cu compared to stoichiometric Cl free layer

Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method