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Epitaxial (100) TiC film deposition on Si (100) substrate by direct current magnetron reactive sputtering of a metallic Ti target with 3%–6% CH4 in Ar gas was investigated. X-ray diffraction and cross-sectional scanning transmission electron microscopy (STEM) reveal that epitaxial cubic TiC can be grown on the Si substrate by domain matching epitaxy in 5/4 ratio with the epitaxial relationship of TiC (100)[0    1 ¯    1] // Si (100)[0    1 ¯    1]. For sputtering with 3% and 4% CH4, the deposited films are found to consist of both TiC and metallic Ti phases. Increasing the CH4 flow ratio to 5% results in a deposited film completely consisting of TiC without metallic Ti phase. The crystallinity of the deposited TiC is also improved with increasing the CH4 ratio to 5%. X-ray photoelectron spectroscopy shows that the [C]/[Ti] atomic ratio in TiC is nearly close to 1 for growth with 5% CH4 flow ratio and above. The measured electrical resistivities of the deposited films also increase from 41 to 153 μΩ·cm with increasing the CH4 ratio from 3% to 6%. With film growth beyond 50 nm thickness, it is shown that some disoriented TiC grains are formed.

Reactive Sputtering Deposition of Epitaxial TiC Film on Si (100) Substrate