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In this paper a new type of indium doped SnO2/SiO2/(textured) n-Si solar cell were prepared by vacuum evaporation source.. The SnO2 layer is simultaneously an antireflection coating and a transparent upper contract. The interfacial layer plays an important role in determining the short circuit current, open circuit voltage, fill factor and efficiency of the cell. In this paper, the effects of interfacial oxide layer thickness, SnO2 layer thickness, indium layer thickness were studied. The indium doped SnO2 layer reduces the cell series resistance and hence increase the cell output power, the performance parameters of the fabricated solar cell were as follows: an Voc of 0.646 V, Isc of 29.6 mA cm -2 , a fill factor of 0.7 and a conversion efficiency of 13.38 at an AM 1.0 irradiance.

Study and Fabrication of High Efficiency Indium Doped SnO2/SiO2/ n– Si Solar Cells.