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Gallium sulfide (GaS) is a layered metal monochalcogenide semiconductor that has recently garnered considerable attention in various fields. In this study, we investigated the nonlinear absorption characteristics of multilayer β-GaS thin films on sapphire substrate by using femtosecond open-aperture Z-scan method. The β-GaS films exhibit saturable absorption behavior at 532 nm while nonlinear absorption appears under 650 nm excitation. The nonlinear absorption coefficient of β-GaS was determined to be −1.8 × 10 –8  m/W and 4.9 × 10 –8  m/W at 532 and 650 nm, respectively. The carrier dynamics of β-GaS films was studied  via  femtosecond transient absorption (TA) measurements. The TA results demonstrated that β-GaS films have broad photo-induced absorption in the visible regime and sub-nanosecond lifetime. Our results indicate that gallium sulfide has large nonlinear optical response and long carrier lifetime, which could be applied in future photonic devices.

Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films