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This work reports the influence of deposition temperature on the deposition of SiO 2 films on silicon substrate by using chemical reaction of silicone oil vapor andozone gas at low temperature. An organic solution as a catalyst at atmospheric pressure has been used to enhance the deposition rate of SiO 2 . The deposition rate of SiO 2 films was found to vary with the variation of the concentration of the catalyst and deposition temperature (160°C ~ 260°C). The deposited SiO 2 films were confirmed by Fourier transform infrared (FTIR) spectroscopy. The thickness and refractive index of the as-deposited films were measured by the laser ellipsometry. FT-IR spectra of the as-deposited films were very much similar to those of SiO2 films found in literature. The deposition temperature was found to influence the deposition rate of SiO 2 strongly. The maximum deposition rate was found to 17.2 nm per minute for the case of 220°C. The deposition temperature also influenced the refractive index of the films. Experimental results showed that the deposition temperature could be a major parameter for the enhancement of the deposition rate.

Study of the Influence of Temperature on the Deposition of SiO<sub>2</sub> Films from Reaction of Silicone Oil Vapor and Ozone Gas