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A Multiquantum Well (MQW) SixGe1-x/Si DAR (Double Avalanche Region) IMPATT (Impact Avalanche Transit Time) diode as a high power-high efficiency-low noise source at W-band is proposed in this paper. The RF power, conversion efficiency and noise of the device are optimized with respect to number of quantum wells and Ge mole fraction. The proposed device delivers peak power of 2.7 W, conversion efficiency of 7.5% and noise measure of 25 dB when the number of wells in the MQW structure is four and mole fraction of Ge is 0.3. The admittance plots of the device exhibit distinct negative conductance bands for three different (0.1, 0.2 and 0.3) mole fractions of Ge. An upward shift of optimum frequency is observed with increasing Ge mole fraction. The noise measure of the device decreases with increasing mole fraction of Ge and decreasing current.

Low Noise Multiquantum Well DAR IMPATT Diodes Based On SiXGe1-X/Si