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The grain boundaries in high-purity oxide ceramics, such as Al 2 O 3  and TZP, are often free from glass phase, and the high-temperature plastic flow or grain boundary failure is sensitive to small levels of doping by various cations. For example, the high-temperature creep strain rate in finegrained, polycrystalline Al 2 O 3  is highly retarded by 0.1 mol% Lu 3+  or Zr 4+ -doping. The elongation to failure in superplastic TZP is improved by 0.2–3 mol% Ge 4+ -doping. Such a dopant effect is attributed to changes of the grain boundary diffusion due to the segregation of dopant cation along the grain boundaries. Quantitative analysis on the atomic structure and chemical bonding state along the grain boundaries by high-resolution electron microscopy, energy-dispersive X-ray spectroscopy, electron energy-loss spectroscopy and molecular orbital calculations will provide theoretical guiding principles to design high-performance oxide ceramics in the near future.

Dopant effect on high-temperature plastic flow behavior and grain boundary chemistry in oxide ceramics