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A review of various laser techniques for microscale processing of SiC for microelectronics and MEMS applications is presented. SiC is an excellent material for harsh environments due to its outstanding mechanical, thermal, and chemical properties. However, its extreme stability and inert properties created difficulties in conventional microfabrication methods to fabricate devices and has offered an opportunity for the exploration of laser processing as an alternative. Many aspects of laser processing of SiC are investigated across the globe using wavelengths ranging from 193 to 1064 nm and pulse widths from nanoseconds to femtoseconds with results indicating that lasers can become successful tools for SiC microprocessing in the future. This paper is categorized into additive and subtractive laser techniques in order to facilitate a discussion of all processes used for fabricating microdevices.

Pulsed laser ablation and micromachining of 4H and 6H SiC wafers for high-temperature MEMS sensors