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Pulsed green laser with wavelength of 532 nm is employed to dice the sapphire substrate. The regular periodical stripes are generated on the sidewall of the sapphire under the laser ablated groove after breaking. The result suggests the formation of the periodical stripes on the sidewall is due to the multiple thermal accumulation and thermal shocks during laser dicing. Laser processing parameters (laser pulse energy, scanning velocity and laser pulse repetition rate) affect the stripe space, length and shape. The laser pulse energy and scanning velocity are the two main influence factors, while the laser pulse energy is the least influence one. The appearance of stripes can deepen the laser-cut kerf depth and contribute to the sapphire breaking procedure after laser dicing.

Pulsed Green Laser Induced Regular Stripes on Kerf Sidewall of Sapphire Substrate