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This paper proposes an alternative laser cleaning technique for silicon wafers to overcome the difficulties in removing submicron particles by using the conventional ultrasonic cleaning method. An Nd:YAG laser was applied on the back side of a wafer submerged in water. The laser energy induced shock waves in the wafer, which were transmitted into the water and a streaming bubble flow was generated. The shock waves and bubble flow removed the alumina particles of 0.5 μm in size from the wafer surface. Because the wafer was in contact with the water, the damage caused by the laser heat was significantly reduced. This study analyzed the laser stationary and laser scan cleaning techniques and established the laser power and scanning speed parameters. The cleaning efficiency of the proposed technique was found to be excellent, and the laser power required was less than 50 W. The temperature increase in the wafer caused by the laser heating was less than 30°C. Thus, the proposed acoustic streaming technique has great potential to provide an improved solution for silicon wafer cleaning.

Laser Cleaning Technique Using Laser-induced Acoustic Streaming for Silicon Wafers