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In this paper, we present results of characterization of a bifacial silicon solar cell, under multispectral steady state illumination, using finite element method (FEM). The illumination level (n) and back surface recombination velocities (Sb) effects on solar cell electrical parameters have been highlighted. After solving the continuity equation that describes the solar cell operation, the excess minority carrier’s density and current-voltage characteristics are determined for various values of illumination level and recombination velocities on the junction and the back surface of the solar cell. The results obtained are in agreement with those given by analytical methods and prove that the photovoltaic cells can be analyzed only by numerical methods, such as the FEM, characterized by their robustness and flexibility in their applications in a context where those methods take more and more importance in the development of Computer Aided Design (CAD) tools.

CHARACTERIZATION OF A BIFACIAL SILICON SOLAR CELL UNDER MULTISPECTRAL STEADY STATE ILLUMINATION USING FINITE ELEMENT METHOD