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A composite novolac/2-diazonaphthoquinone photoresist is the most important for microlithography in the integrated circuit industry today. This symposium was planned to review the informations of scientific and technical importance on the resist and to collect them on the Journal of the Photopolymer Science and Technology as the first class references for scientists and engineers in this field. The symposium is divided into two sections. In the first section, the reaction mechanisms of ortho-diazonaphthoquinone and related compounds are discussed. Although the resist is a composite film of novolac matrix, photochemistry of the photo-active compounds (PAC) is essential. The first paper deals with quantum theoretical aspects of the elementary reactions of ortho-diazoquinc and 2-diazoketones. Recent developments of experimental techniques with laser beam technology revealed the structures of short-lived intermediates in photochemical reactions of PAC. This topic is considered in detail in the second and the third papers. The second section on recent developments of the ortho-diazonaphthoquinone resist contains ten scientific and technical papers. The resist pattern profile improvement technique usable for 16 Mbit technology is included in the first three papers. The fourth paper deals with the optimum structure of novolac for high-resolution resists. The high-resolution technology is also discussed in the sixth paper. The fifth paper describes a new photoresist comprised of 2-diazoketone for excimer-laser lithography. The image reversal technique of the positive-working resist and the chemical amplification are promising for developments of new resists of high sensitivity and high-resolution. The 7, 8 and 9th papers contain these subjects. The last paper deals with the silylation technique of a plasma developable resist. This technique is also discussed in the first paper of the second section. As described above, the 13 papers invited for the symposium describe the essential information for resist technology in microlithography. The organizers believe that this issue of the Journal of Photopolymer Science and Technology will be an indispensable reference book for scientists and engineers of resist technology for long time from today.

SYMPOSIUM on THE REACTION MECHANISM AND RECENT DEVELOPMENTS OF THE ortho-DIAZONAPHTHOQUINONE PHOTORESIST