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Development of an Ultrahigh Vacuum Scanning Tunneling Microscope with a Field Ion Microscope and Observation of the Initial Stage of Al Adsorption on Si(001) Kazuyoshi SUGIHARA, Akira SAKAI, Kunihiro MITSUTAKE, Yoshiaki AKAMA, Naohiro SHODA, Yoshihide KATO, Hiroshi TOKUMOTO and Masatoshi ONO An ultrahigh vacuum scanning tunneling microscope combined with a field ion microscope (UHV-STM/FIM) was developed for monitoring and analyzing ULSI microfabrication materials and processes. In the UHV-STM/ FIM system, a tip can be characterized by an FIM, and both tips and samples can be easily replaced in situ. The system has been operated successfully in observing the atomic arrangements of various semiconductor material surfaces. This paper describes the design of the system in detail and shows high-resolution data of the initial stage of Al adsorption on Si(001). The combination of FIM into UHV-STM is found to be useful for surface studies with atomic resolution.

seimitsu kōgakkaishi/seimitsu kougakkaishi

Development of an Ultrahigh Vacuum Scanning Tunneling Microscope with a Field Ion Microscope and Observation of the Initial Stage of Al Adsorption on Si(001).