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Bi2Te3-based thermoelectric semiconductors were deformed by high-pressure torsion (HPT) using a low rotational speed of 0.1rpm, which is less than the speed of 1rpm used in our previous studies. The effects of different rotational speeds were investigated by metallographic and thermoelectric studies. Sample disks of p-type Bi0.5Sb1.5Te3.0 were cut from sintered compacts made by mechanical alloying (MA) followed by hot-pressing. The disks were deformed by HPT with 1, 3, and 5 turns at 473K under 6.0GPa of pressure at a rotational speed of 0.1rpm. The preferred orientation was investigated using X-ray diffraction. The orientation factors of the disks changed from 0.054 for pre-rotation up to 0.653 for post-rotation samples. The maximum power factor of the disk using 5 turns and a speed of 0.1rpm was 6.6 © 10 ¹3 Wm ¹1 K ¹2 at 363K, which was larger than the reported power factors of 4.3 © 10 ¹3 Wm ¹1 K ¹2 for a disk using 5 turns and a speed of 1rpm, and 4.6 © 10 ¹3 Wm ¹1 K ¹2 for melt-grown materials. Slow deformation by HPT was found to enhance the electrical conductivities and Seebeck coefficients of Bi2Te3-based thermoelectric semiconductors by producing a preferred orientation and grain refinement. [doi:10.2320/matertrans.ME201101]

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Effects of Low Rotational Speed on Crystal Orientation of Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt;-Based Thermoelectric Semiconductors Deformed by High-Pressure Torsion