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Tunneling of electrons through the barriers in heterostructures devices isinvestigated by using the unified Transfer Matrix Method. The effect of barrierwidth on electron transmission coefficients has also been examined fordifferent pairs of semiconductor devices of significant research interest incurrent years. Such Pairs involve AlxGa1-xAs/GaAs, AlSb/InAs, and CdS/CdSequantum barriers with varying dimensions reduced from 20 nm to 5nm to observehow tunneling properties are affected by scaling. The effective electron massesin the well and barrier regions typically vary with constituent materials. Ithas been shown that the transmission coefficients are significantly changed dueto the coupling. The effective mass-dependent transmission coefficients forelectron energy have been evaluated in terms of the mass discontinuity metrics.The electron transmission coefficients for each pair of quantum structures areplotted with the variation of its electron energy, normalized to its potentialenergy. The resonant state obtained here will be beneficial for designingdetectors, optical filters, photonic-switching devices and other optoelectronicand photonic devices.

Energy effective mass dependence of electron tunneling through CdS/CdSe, AlxGa1-xAs/GaAs and AlSb/InAs Multiple Quantum Barriers