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A complex of structural spectroscopic diagnostic methods was used to study the effect of the transition layer of nanoporous silicon on the practical implementation and specific features of the epitaxial growth of GaN layers by molecular beam epitaxy with plasma nitrogen activation (MPE PA) on SiC/por -Si/c-Si templates. It was shown for the first time that the introduction of a transition layer of nanoporous silicon into the SiC/por -Si/c-Si template, where the 3C-SiC layer was created by atomic substitution, has a number of undeniable advantages over standard silicon substrates. In particular, this approach made it possible to reduce the lattice stresses in the GaN epitaxial layer, which was synthesized on the SiC surface of the SiC/por -Si/c-Si template by the MPE PA method, and also to reduce the fraction of vertical dislocations in the GaN layer by almost 90%. It was also found that the use of the SiC/por -Si/c-Si template leads to the formation of a more uniform GaN layer with no visible extended defects, which ultimately made it possible to achieve unique optical and electrophysical characteristics in hybrid GaN/SiC heteroepitaxial structures. The data obtained will serve as an important material for understanding the fundamentals of the physics of GaN/SiC/por -Si nanoheterostructures and contribute to their potential application in optoelectronics. Физика и техника полупроводников, 2020, том 54, вып. 4

Оптические свойства гибридных гетероструктур GaN/SiC/por-Si/Si(111)