English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

It has been found out experimentally that any noticeable changes in current-voltage characteristics and low-frequency noise in 4H-SiC pin-diodes irradiated by electrons with 0.9MeV energy are seen at a dose 8 ≥ 1.4 · 10 cm . Forward and reverse current-voltage characteristics change non-monotonically at voltages ≤ 2V with an increasing dose due to the interaction between excited electronic subsystem and metastable defects. Furthermore, a steady increase in ideality factor and series resistance values at the region of exponential growth of the currentvoltage characteristics at voltages ≤ 2V is observed. Microwave devices based on low-noise 4H-SiC pin-diodes can show a stable performance at doses 8 ≤ 10 cm . The dose can be enhanced to 8 ≈ 8 · 10 cm in the microwave devices which doesn’t need low level of noise but require stabile regime parameters. 9 Физика и техника полупроводников, 2019, том 53, вып. 4

Влияние облучения электронами с энергией 0.9 МэВ на вольт-амперные характеристики и низкочастотные шумы 4H-SiC pin-диодов