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Electrical properties of silicon-on-sapphire photodiodes were investigated theoretically and experimentally. It has been shown, that basic parameters of photodiodes was equal to the parameters of analog silicon photodiodes, but radiation hardness by order of magnitude greater. Физика и техника полупроводников, 2019, том 53, вып. 3

Исследование радиационной стойкости фотодиодов на структурах кремний-на-сапфире