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Influence of effective concentration of impurity, which defines of conductivity type in base region and thickness of base on the radiation resistance of transistor thermal sensors. The dependences of forward voltage on emitter junction and current amplification factor from magnitude of streams of electrons, neutrons and γ-quanta are obtained. A degradation of forward emitter bias after the ionizing irradiation begins when doses almost on two orders more, than for current amplification factor, depending on design features of the transistor, was obtained. After the annealing of the irradiated by stream of electrons structures the considerable enhancement of reproducibility of heat-sensitive parameter is observed, that raises percent of a yield of suitable

Деградация параметров транзисторных датчиков температуры под действием ионизирующего облучения