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We report on high temperature stability of a near1.5 μm laser synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer were used as an active region of the laser. An InGaAsP quaternary alloy having the bandgap energy of 1.15 eV was utilized as a waveguiding/matrix layer. A high characteristic temperature of the threshold current of T0 = 205K, evaluated in the temperature range of 20−50◦C, was achieved in ridge waveguide laser diodes. A correlation of T0 values with the bandgap energy of the waveguiding layer was found. Физика и техника полупроводников, 2017, том 51, вып. 10

fizika i tehnika poluprovodnikov

Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP