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. The induced (drag) resistivity (ρ_D) is calculated numerically in low temperature, large interlayer separation and weak interactive regime for 2D hole-hole (h-h) static interactions using the RPA method, with the geometry of non-homogeneous dielectric medium. Exchange-correlations (XC) and mutual interaction effects are considered in low/high density regime for analysing the drag resistivity. It is found that the drag resistivity is found inhanced on using the XC effects and increases on increasing the effective mass. In Fermi-Liquid regime, drag resistivity is directly proportional to r2/n3 at low temperature. Temperature (T), density (n), interlayer separation (d) and dielectric constant (ϵ2) dependency of drag resistivity is measured and compared to 2D e-e and e-h coupled-layer systems with and without the effect of non-homogeneous dielectric medium.

Coulomb Drag Study of Non-Homogeneous Dielectric Medium: Hole-Hole Static Interactions in 2D-GaAs DQW