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The breakdown behaviour of multicrystalline silicon solar cells under -5 to -15 V reverse bias is an important reliability issue for solar modules. Different physical processes may be acting in different breakdown sites. Lock-in thermography (LIT) allows to image local breakdown current densities quantitatively. By performing LIT investigations under different conditions and appropriately combining the results, the temperature coefficient of breakdown sites (in % current change per K) and their slope (in % current change per V) can be imaged quantitatively. By performing special LIT measurements under pulsed illumination, also the local avalanche carrier multiplication factor can be imaged quantitatively.

Quantitative imaging of physical parameters of breakdown sites and avalanche multiplication in solar cells by lock-in thermography