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LaNiO3(100)/CeO2(100)/Si(100) as a metal/insulator/semiconductor heterostructure was prepared by a sol-gel method with a spin-coating technique. The structure of each oxide layer was investigated by out-of-plane and in-plane X-ray diffraction analyses. The high degree of {100} -orientation of the CeO2 layers was obtained with higher heat treatment temperatures, 600-700°C. The in-plane measurements revealed that the CeO2 layers had a nonepitaxial structure in spite of the deposition on the Si(100) substrates with good lattice compatibility. The LaNiO3 layers on the CeO2(100)/Si(100) also exhibited the preferential {100} -orientation without epitaxy. The crystallinity of the {100} -oriented grains in the LaNiO3 layers was higher than that in the CeO2 layers. The occurrence of the orientation was discussed in view of the interfacial energies at each interface.

Structural Analysis of Sol-Gel-Derived LaNiO3(100)/CeO2(100)/Si(100) Heterostructures.