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An influence of strong uniaxial elastic deformation on property n Si − and n Si − with the isovalent impurity of germanium are investigated. For the resiliently deformed crystals n Si − and n Si − with the isovalent impurity of germanium along crystallography direction by [100] the characteristic feature of temperature dependences lg (lg ) f T ρ = is transition from inclination 1,68 by 1,83, that is explained an active contribution g -transition to intervalley scattering at T >330 K . f − transitions are thus taken off from intervalley scattering and mobility of electrons grows, that can be used for the increase of carriers current mobility in channel of n-MOS transistors.

THE INCREASING OF CARRIERS CURRENT MOBILITY IN UNIAXIAL DEFORMED CRYSTALS n −Si AND n −Si WITH THE ISOVALENT IMPURITY OF GERMANIUM