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Al-doped ZnO films were grown by pulsed electron deposition (PED) at room temperature and 400 oC and at the oxygen pressure ranged from 3 mTorr to 20 mTorr. Transport properties were measured by van der Pauw technique. Crystallinity of the films was characterized by X-ray diffraction. It was found that the films grown at room temperature have a very high resistivity due to poor crystallinity. For the films grown at 400 o C, the obtained results indicate that the film grown at a lower pressure has a higher carrier mobility as well as a higher carrier concentration, resulting in a lower resistivity. This phenomenon has been discussed in term of the concentration of oxygen vacancies and the number of traps for carriers.

Effect of Oxygen Pressure on Transport Propeties of Al-doped ZnO Films Grown by PED