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NAND Flash devices have become preferred choice in high density, low cost and high read and write oper ations where in very large sequential data has to repeatedly written and read at higher rate. However it is hindered by a charac ter called “Lifetime”. Typically NAND Flash devices wear out providing around 10,000 to 100,000 life cycles. In this paper we are conce rned to discuss about the techniques called Bad-Block Management (BBM) and We ar-leveling to increase the Lifetime of the NAND Fl ash memories.

STUDY OF BAD BLOCK MANAGEMENT AND WEAR LEVELING IN NAND FLASH MEMORIES