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Due to the processing limitation of photolithography, only width and length have been controllable parameters for designing mechanical characteristics of silicon micromachined structures, while thickness has been left pre-determined by the thickness of layers. The range of electromechanical properties have been, therefore, strongly limited by the practical range of these tunable parameters. In this paper, we present a universally applicable fabrication technique to realize multiple-height microstructures by locally controlling the etching depth of ICP-RIE (inductively coupled plasma reactive ion etching). Several layers of etching masks of different materials have been prepared on the initial surface of substrate to avoid repeating photolithography on the etched surfaces. This technique enables us to have one more degree of freedom in designing MEMS structures.

Multiple-height Microstructures Fabricated by ICP-RIE and Embedded Masking Layers