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Properties of two strained-layer InxGa1-xAs/GaAs superlattice (SL) structures grown on (100)oriented GaAs substrates by molecular beam epitaxy have been investigated with emphasis on their electroabsorption (EA) characteristics. Sample 1,125 periods of In0.19Ga0.81 As (25A)/GaAs (25A) SL showed a tilting of the band edge with respect to electric field which is similar as bulk materials-While, sample 2,50 periods of In0.25Ga0.75As(50A)/GaAs(50A)SL exhibited a distinct blue shift at an electric field of 44kV/cm, and then redshifted with further increasing electric field like quantum confined Stark effect. A simple Kronig-Penny model is introduced to characterize such EA effects, and we attribute tentatively the EA effect observed in sample l to photon-assisted tunneling and that of sample 2 to Wannier Stark localization. Observation of distinct Wannier Stark localization effect suggests that elastically-strained SL layers have been grown despite the total thicknesses of strained-layers are well beyond the critical layer thickness limit.

Electroabsorption Effects in Strained-Layer In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs Superlattices