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Ternary Zn1–xCdxO (x  0.12) alloy crystalline films with highly preferred orientation (002) have been successfully deposited on sapphire c-Al2O3 substrates using the direct current (dc) reactive magnetron sputtering technique and annealed at temperature 600 °C in air. The structural and optical properties of O Cd Zn x x 1 thin films were systematically studied using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), micro-Raman and photoluminescent (PL) spectroscopy. XPS measurements clearly confirmed Cd incorporation into ZnO lattice. XRD data revealed that the growth of wurtzite O Cd Zn x x 1 films occurs preferentially in the (002) direction. Also, when the Cd content is increased, the XRD peaks shift towards smaller angles and the full width at half-maximum of the lines increases. When the Cd content increases, LO 1 A ( O Cd Zn x x 1 )-like Raman modes show composition dependent frequency decrease and asymmetrical broadening. The near band-edge PL emission at room temperature shifts gradually to lower energies as the Cd content increases and reaches 2.68 eV for the highest Cd content (x = 0.12). The analysis of NBE band emission and Raman LO 1 A ( O Cd Zn x x 1 ) mode shows that at a higher Cd content the coexistence of O Cd Zn x x 1 areas with different concentrations of Cd inside the same film occurs. The presence of CdO in annealed O Cd Zn x x 1 films with the higher Cd content was confirmed by Raman spectra of cubic CdO nanoinclusions. The XRD data also revealed phase segregation of cubic CdO in annealed O Cd Zn x x 1 films (Tann = 600 °C) for x ≥ 0.013.

Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn1-xCdxO films grown by dc magnetron sputtering