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Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P + ions; the energy of ions was 150 keV. For the implanted Cu6PS5X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77…320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu6PS5X (X = I, Br) superionic conductors have been studied.

Optical absorption edge and luminescence in phosphorous-implanted Cu6PS5X (X = I, Br) single crystals