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Silicon and indium co-doped ZnO thin films with both high optical and electrical performances have been successfully synthesised for the first time by the technique of spray pyrolysis. We find that this co-doping strategy can achieve comparable Figures-of-Merit performances to indium zinc oxide itself, but with, importantly, a significant saving in the indium content. The properties of the co-doped films are compared with those of either single indium or silicon doping.

Investigations of the optical and electronic effects of silicon and indium co-doping on ZnO thin films deposited by spray pyrolysis