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We present the description of the synthesis and characteristics of the SnO 2  and ZnO modified by novel tetrathiafulvalene (TTF) derivative. The analysis of the gas sensor properties showed the possibility of light photoactivation of modified semiconductor gas sensor due to the electron transfer from LUMO of TTF molecule to the conduction band of semiconductor matrix.

Effect of light irradiation on the gas sensor characteristics of the SnO 2 and ZnO modified by tetrathiafulvalene derivative