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One of the key parameters determining detection properties of silicon PIN detector structures (p + -ν-n +  or n + -ν-p + ) is minority carrier diffusion length in p-n junction regions p-n (p + -ν or n + -ν). The parameter concerned strongly depends on quality of the starting material and technological processes conducted and has a significant impact on detector parameters, in particular dark current intensity. Thus, the parameter must be determined in order to optimise the design and technology of detectors.

Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures