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I–III–VI 2  Chalcopyrite Cu(In 1− xGax)Se 2  (CIGS) has attracted attention as absorbing layer in photovoltaic (PV) device. In this study, we investigated the fundamental properties of CIGS single crystals, and fabricated single crystal-based PV device. CIGS single crystals without secondary phase were successfully grown by In-solvent traveling heater method (THM). The conversion of conduction type from n- to p-type can be observed above 0.3 of Ga ratio  x  because of high acceptor defect concentration. PV device based on high-quality CIGS bulk single crystal demonstrates high open-circuit voltage of 0.765 V with the efficiency of 12.6%.

Solution growth of chalcopyrite Cu(In 1− x Ga x )Se 2 single crystals for high open-circuit voltage photovoltaic device