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Single silicon vacancy (SiV) color centers in diamond have recently shown theability for high brightness, narrow bandwidth, room temperature single photonemission. This work develops a model describing the three level populationdynamics of single SiV centers in diamond nanocrystals on iridium surfacesincluding an intensity dependent de-shelving process. Furthermore, weinvestigate the brightness and photostability of single centers and findmaximum single photon rates of 6.2 Mcps under continuous excitation. Weinvestigate the collection efficiency of the fluorescence and estimate quantumefficiencies of the SiV centers.

Photophysics of single silicon vacancy centers in diamond: implications for single photon emission