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Non-stoichiometric Sn1-yTe is a strongly degenerated n-type semiconductor. This is important for understanding unusual features of magnetic behaviour of Sn1-xGdxTe where the relative positions of the Fermi energy and the atomic d-level of Gd govern the exchange coupling. The influence of the Sn vacancies on the band structure cannot be neglected if their concentration reaches a few atomic percent. We address this problem by using a tight-binding coherent potential approach and show that although the character of the bands remains unchanged, they are modified so that Ed can come out above the heavy-hole band. PACS numbers: 71.20.Nr, 71.55.Jv.

Changes of Electronic Structure of SnTe Due to High Concentration of Sn Vacancies