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Experimental evidence for unidirectional microcracking in semi-bulk AIGaAs layers grown on (001) GaAs substrates is presented. The asymmetrical microcracking leads to anisotropic 1attice misfit relaxation in the AIGaAs/GaAs structure and is explained in terms of higher mobility of [-110]-oriented α-type dislocations tlan that of β-tyge dislocations oriented in [110] direction. PACS numbers: 68.55.Ln, 68.60.Βs

Anisotropic Lattice Misfit Relaxation in AlGaAs Semi-Bulk Layers Grown on GaAs Substrates by Liquid Phase Electroepitaxy