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We present a new outlook at the study of metal-semiconductor interface formation. A resonant photoemission spectroscopy tuned to the Fe 3p-3d transition (56 eV) was used to investigate the changes after sequential deposition of Fe atoms on freshly cleaved Cd0.86Fe0.14Se crystal surface. In the first stages (0.6-4 ML) of Fe deposition the contribution of Fe 3d electrons to the valence band grows up markedly indicating the increase in Fe content in the Cd0.86Fe0.14Se crystal surface region. When the amount of Fe exceed 40 ML the resonant photoemission spectra became similar to the Fe metal with some contribution of the ternary crystal substrate.

Cd1-xFexSe/Fe Interface Formation Observed by Means of Photoemission Spectroscopy

Cd_1-xFe_xSe/Fe Interface Formation Observed by Means of Photoemission Spectroscopy