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We present Hall effect and resistivity measurements as a function of pressure performed on MBE-grown Cd1-xMnxTe (with x = 0.14) layer (1 mu m) doped with bromine. The experimental data were analysed using positive and negative U model of the Br centres. We found that both models could reproduce the experimental points, but in the case of positive U model - only under assumption that the sample was completely uncompensated.

Hydrostatic Pressure Study of MBE CdMnTe Doped with Bromine