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A negative magnetoresistance is observed in Si/SiGe modulation doped heterostructures which is attributed to the single particle quantum interference (weak localization) effect. From analysis of the experimental data the electron phase coherence time tau phi is extracted to follow a (aT + bT(2))(-1) dependence. The evaluated prefactor alpha = 0.25 is below the theoretical limit of 0.5, but agrees with observations in Si and GaAs/AlGaAs heterostructures.

Weak Localization and Electron-Electron Interaction in Si/SiGe Quantum Wells